Permeation of Ga was studied by placing an In-Ga-Sb solution in contact with InSb substrates under conditions of zero crystal growth. It was found that the permeation distances were equal to 770, 1270 and 2750μ at 380, 430 and 480C, respectively. It was deduced that the apparent diffusivity of Ga ranged from 3 x 10-7 to 5 x 10-6cm2/s. Rapid permeation occurred when the substrate came into contact with the solution.

M.Kumagawa, H.Ohtsu, E.Hamakawa, T.Koyama, M.Masaki, K.Takahashi, V.G.Lifshits, Y.Hayakawa: Materials Science and Engineering B, 1997, 44[1-3], 301-3