Thin films of 3C-type carbide were grown onto Si(001) and Si(111) substrates by means of supersonic jet epitaxy. Cross-sectional high-resolution scanning transmission electron microscopy was used to study the interface structure and defects. The occurrence of twins was evident in selected-area electron diffraction patterns taken from a SiC/Si(111) heterostructure. A 39º angle between twinned and untwinned {111} planes in the [1¯10] projection was confirmed by X-ray pole figures. The twinning was attributed to growth on the {111} planes. Pure edge misfit dislocations were needed at the interface in order to accommodate the extreme lattice mismatch of SiC/Si(001) heterostructures. A schematic model of the scanning transmission electron microscopic images revealed that a pair of 60º dislocations intersected to form an edge misfit dislocation. A large number of stacking faults and micro-twins were present in SiC thin films that were grown onto Si(001) or Si(111) substrates. The formation of planar defects was attributed to the coalescence of individual 3-dimensional islands.

Structural Defects in 3C-SiC Grown on Si by Supersonic Jet Epitaxy. C.Long, S.A.Ustin, W.Ho: Journal of Applied Physics, 1999, 86[5], 2509-15