The thermal desorption of D from ion-injected material, at various temperatures, was compared with microstructural changes during irradiation and annealing in order to identify traps. In the case of implantation at 300K, black-dot defects and very small bubbles formed at low doses and high doses, respectively. The bubbles grew during annealing at temperatures above 573K, and acted as major trapping sites for D at doses of less than 1021/m2. The D which was trapped in the bubbles was finally released at about 880K. Long thin bubbles were produced by implantation at 673K, and were suggested to be responsible for high retention after implantation at high temperatures.

N.Yoshida, S.Mizusawa, R.Sakamoto, T.Muroga: Journal of Nuclear Materials, 1996, 233-237B, 874-9