It was shown that the desorption of D from material which had implanted with 5keV D ions, to fluences ranging from 1020 to 1021/m2, occurred in a single high-temperature stage. When the fluence was greater than 1.2 x 1021/m2, another stage appeared. The desorption maximum for the lower fluences was narrow, and consisted of peaks at about 460 and 490K. The former was attributed to the desorption of D from the walls of opened channels which were formed by D-ion implantation. The other peak was attributed to an opening up of bubbles or closed channels to the outer surface. The position of the maximum of the peak which appeared at higher fluences shifted from 850 to 1050K; depending upon the fluence. This maximum was attributed to the liberation of D atoms which were bound at vacancy complexes. The dependence of the peak upon the fluence was controlled by the interaction of freely migrating D atoms with arrangements of fully-closed or partially opened gas cavities which were created during temperature ramping.

A.V.Markin, V.N.Chernikov, S.J.Rybakov, A.P.Zakharov: Journal of Nuclear Materials, 1996, 233-237B, 865-9