Layers were synthesized via the high-dose implantation of Ge and C ions into Si substrates, followed by annealing. Shallow p+/n junctions were fabricated by incorporating C to a peak concentration of more than 1%. The diffusion of B in this layer was significantly suppressed, and the depth profile of B was reproduced by using a simulation in which a diffusion coefficient that was much lower than the reported value was assumed. This was attributed to a reduced number of Si interstitials.

Shallow p-Type SiGeC Layers Synthesized by Ion Implantation of Ge, C and B in Si. H.Kurata, K.Suzuki, T.Futatsugi, N.Yokoyama: Applied Physics Letters, 1999, 75[11], 1568-70