The resistivity recovery of pure and impurity-doped (0.2 to 1.5%Si, 0.15%[C+N]) ferritic alloys, after irradiation at 50 to 60K, was investigated at temperatures ranging from 110 to 390K. A fine recovery spectrum which consisted of 5 peaks was observed between 135 and 230K. It was found that short-range ordering began with the onset of long-range vacancy migration. Doping with either type of impurity suppressed the recovery spectrum structure, between 160 and 220K, in a similar manner. A stage-III peak was found at 210K, and peaks at 175K and 195K were attributed to short-range vacancy migration. It was supposed that such a manifestation of short-range vacancy migration was due to a marked immobilization of self-interstitial atoms, and to the suppression of short-range and long-range defect annealing processes in stage I, according to a configuration-trapping mechanism which was similar to that which operated in Ag-Zn alloys.

A.L.Nikolaev, V.L.Arbuzov, A.E.Davletshin: Journal of Physics - Condensed Matter, 1997, 9[21], 4385-402