An intrinsic stacking fault was characterized by using field ion microscopic techniques, and the lattice distortion in the vicinity of the partial dislocation loop which bounded the fault was determined. The lattice distortion around the fault was caused mainly by the partial dislocation loop, and its magnitude could be evaluated on the basis of the degree of bending of the surface atomic rows. The maximum radius of the visible distortion in the vicinity of the partial dislocation was found to be about 4.6nm.

S.G.Song, C.L.Chen, T.T.Tsong: Materials Science and Engineering A, 1996, 212[1], 119-22