High-resolution electron microscopy was used to determine the atomic structure of the {1¯2•0} stacking fault, which folded easily from the prismatic plane to the basal plane in wurtzite epitaxial layers. Experimental evidence was found here for the simultaneous occurrence of 2 atomic configurations of the {1¯2•0} stacking fault. In more than 90% of cases, it took on the atomic structure of the ½<10•1>{1¯2•0} stacking fault. In a very few nm-sized areas, it exhibited a 1/6<20•3> stacking-fault atomic configuration.

Observation of Two Atomic Configurations for the {1¯2•0} Stacking Fault in Wurtzite (Ga,Al) Nitrides. P.Vermaut, G.Nouet, P.Ruterana: Applied Physics Letters, 1999, 74[5], 694-6