Formation of the {1¯2▪0} stacking fault, which had 2 atomic configurations in wurtzite-type nitrides, was investigated by means of high-resolution electron microscopy and energetic calculations. A modified Stillinger-Weber potential was used to investigate the relative stability of the 2 atomic configurations, which had comparable energies in AlN. The ½<10▪1>{1¯2▪0} atomic configuration was expected to be more stable in GaN and InN. High-resolution plan-view electron microscopic observations revealed a ½<10▪1>{1¯2▪0} atomic configuration in GaN layers. Cross-sectional observations revealed a 1/6<20▪3> configuration in small areas within the AlN buffer layer. It folded rapidly to the basal plane and, when back in the prismatic plane, had the ½<10▪1>{1¯2▪0} atomic configuration.

Formation Mechanism and Relative Stability of the {11¯20} Stacking Fault Atomic Configurations in Wurtzite (Al,Ga,In) Nitrides. P.Ruterana, B.Barbaray, A.Béré, P.Vermaut, A.Hairie, E.Paumier, G.Nouet, A.Salvador, A.Botchkarev, H.Morkoç: Physical Review B, 1999, 59[24], 15917-25