An analysis was made, of the coincidence rotation around the [00•1] axis, for Σ = 91, Σ = 73, Σ = 43, Σ = 31, Σ = 67 and Σ = 13. The atomic structures of the symmetrical grain-boundary planes were constructed using structural units which were based upon 3 atomic configurations of the a dislocation. A detailed experimental analysis was made of the Σ = 31 boundary, and it was found that 2 structural units were sufficient for treating the atomic configuration of the boundary.

The Atomic Structure of Tilt Grain Boundaries in AlN/GaN Layers Grown on (00•1) Sapphire. V.Potin, A.Béré, P.Ruterana, G.Nouet: Materials Science Forum, 1999, 294-296, 243-6