A continued mathematical analysis was made of a reaction-diffusion model for the transport of foreign atoms in semiconductors. Here, more general boundary conditions were used, and more general assumptions were made concerning the coefficients of volume and boundary reaction. An investigation was also made of the corresponding discrete-time problems.

A.Glitzky, K.Groger, R.Hunlich: Nonlinear Analysis Theory, 1997, 28[3], 463-87