It was noted that the classical theory of the effect of a single immobile dislocation upon the diffusion of point defects could not be applied to the description of the effect of a finite, but very large number of dislocations, upon this diffusion. This was because, in this case, dissipative effects due to dislocations could not be neglected. These dissipative effects were described here by means of a generalized gauge procedure which took advantage of the existence of short-range order in dislocated crystals. It was shown that, for uniformly dense distributions of dislocations, the existence of dissipative effects implied the existence of a non-vanishing scalar curvature of a conformally flat configurational space of a single diffusing point defect. Equations which described the interaction energy between dislocations and a diffusing point defect were proposed, and the contribution of elastic and inelastic interactions to this energy was considered.

A.Trzesowski: International Journal of Theoretical Physics, 1997, 36[1], 193-208