Multilayers on a Si(100) substrate were prepared by plasma-enhanced chemical vapour deposition and magnetron sputtering. Morphological observations and chemical analysis were performed by means of scanning electron microscopy and energy-dispersive X-ray analysis. The carbonitride and diamond multilayers were clearly observed, and the N/C composition ratio was close to 1.33. Defects in the structure were investigated for the first time by means of infra-red light-scattering tomography. It was found that most defects in the C3N4 and diamond multilayers were introduced by extended growth of defects in the Si substrate. The density distribution of defects in the structure supported this conclusion. The defects were thought to be dislocation clusters, agglomerated by an interstitial-type defect.

Observation of Defects in a C3N4/Diamond/Si Structure by Infrared Light Scattering Tomography. M.Ma, T.Tsuru, T.Ogawa, Z.Mai, C.Wang, J.Guo, X.Ma, E.G.Wang: Journal of Physics - Condensed Matter, 1999, 11[20], L191-7