The effect of threading dislocations upon electron transport in In0.24Ga0.76N/GaN multiple quantum wells was studied by means of transmission electron microscopic and Van der Pauw Hall-effect techniques. Cross-sectional transmission electron microscopic imaging revealed threading dislocations which screwed through the multiple quantum wells. It was found that the Hall mobility decreased as the temperature decreased, due to threading dislocation-scattering, and the Hall carrier concentration underwent a transition from conduction-band transport to localized-state hopping transport.

Effect of Threading Dislocations on Electron Transport in In0.24Ga0.76N/GaN Multiple Quantum Wells. I.Lo, K.Y.Hsieh, S.L.Hwang, L.W.Tu, W.C.Mitchel, A.W.Saxler: Applied Physics Letters, 1999, 74[15], 2167-9