A model was developed in order to describe the evolution of defect concentrations in Si-based devices which were irradiated to 1MeV neutron fluences of up to 1014/cm2. The resultant significant displacement damage was analyzed by using Shockley-Read-Hall semiconductor statistics. It was found that observed increases in leakage current, and dopant concentration changes, were well described in the case of 60Co γ-irradiation but less well described in the case of fast neutron irradiation. A possible non-Shockley-Read-Hall mechanism was considered which was based upon the concept of charge transfer between clustered di-vacancy defects in neutron-damaged Si detectors. This led to a marked enhancement, as compared with Shockley-Read-Hall predictions for V2 acceptor-state occupancy.

K.Gill, G.Hall, B.MacEvoy: Journal of Applied Physics, 1997, 82[1], 126-36