The interfacial reaction between these materials was investigated, and the reaction path was analyzed by using the chemical potential diagram for undoped and doped samples. The layer sequences of products for undoped samples (Cu2O/Cu/NiO/Ni) and doped samples (Cu2O/Cu/NiO/Cu-Ni) were obtained. The reaction and diffusion paths in the chemical potential diagram of the Cu-Ni-O system were explained on the basis of the assumption that local equilibrium was attained at the interfaces. A doping effect of NiO in Cu2O was attributed to a higher mobility of Cu in the NiO phase, due to a higher chemical potential of O at the Cu/NiO interface. This resulted from the higher chemical potential of Ni in Cu2O. When the reaction time became longer, it was expected that the reaction and diffusion paths would become similar to those of doped samples.

H.Inaba: Journal of Materials Science, 1997, 32[1], 91-7