Interdiffusion on the group-V sub-lattice of GaAs was studied. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs superlattices were annealed at temperatures of between 850 and 1100C, under various As vapor pressures. The diffusion coefficients were measured by means of secondary ion mass spectroscopy and cathodoluminescence spectroscopy. It was found that the interdiffusion coefficients were higher under As-rich conditions than under Ga-rich conditions; thus indicating an interstitial-substitutional diffusion mechanism.

U.Egger, M.Schultz, P.Werner, O.Breitenstein, T.Y.Tan, U.Gösele, R.Franzheld, M.Uematsu, H.Ito: Journal of Applied Physics, 1997, 81[9], 6056-61