It was recalled that the formation of shallow p-type layers was commonly carried out via Hg implantation. Microscopic information on the surroundings of the Hg dopant and the recovery of the damaged layer was derived here, for the first time, by combining Rutherford back-scattering spectroscopic and hyperfine interaction studies. It was shown that most of the radiation damage which was created by implantation could be recovered by 2-step furnace annealing at 400 and 800C, using a proximity cap.

Isolde: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 244-7