The electron capture properties of DX centers in Si-doped Ga0.7Al0.3As were studied by analyzing photo-conduction decay transients. Such measurements permitted the study of the capture rate over 3 orders of magnitude. Two distinct capture time-constants were observed and were suggested to arise from 2 DX levels in the material. The capture barriers for these levels were 0.365 and 0.424eV.

Y.B.Jia, H.G.Grimmeiss: Solid State Communications, 1997, 101[10], 771-4