Models were presented for the distribution profiles of Be in ion-doped layers after implantation and annealing. The possibility of predicting the mean free path of Be in III-V compounds was considered. The effect of defect-impurity interactions upon Be diffusion was also examined. It was found that a flux of impurities towards the surface occurred which was not diffusive in nature.

G.I.Koltsov, V.V.Makarov, S.J.Yurchuk: Fizika i Tekhnika Poluprovodnikov, 1996, 30[10], 1907-16 (Semiconductors, 1996, 30[10], 996-1000)