A study was made of the effects of electron irradiation (to doses of 1016/cm2) and subsequent annealing (150 to 350C, 600s to 10h), of p-type Zn-doped crystals, upon the formation and dissociation of VAsZnGa pairs. An analysis of the kinetics of formation and dissociation of VAsZnGa pairs permitted the determination of the diffusion coefficient of radiation-induced As vacancies. This was shown to be equal to 1.5 x 10-18, 10-17 and 5 x 10-17cm2/s at 150, 175 and 200C, respectively. The associated activation energy was 1.1eV. The dissociation energy of the vacancies was 1.6eV.

K.D.Glinchuk, A.V.Prokhorovich: Fizika i Tekhnika Poluprovodnikov, 1996, 30[11], 2033-41 (Semiconductors, 1996, 30[11], 1059-63)