By combining temperature dependent Rutherford back-scattering spectroscopic measurements with PIXE angular scan analyses, an attempt was made to determine whether there was a difference in the damage to the Ga and As sub-lattices in weakly ion-implanted layers. It was found that the half-width of the Rutherford back-scattering spectroscopic angular scan curves, at zero depth, reflected the dose dependence of the concentrations and displacement distances of displaced lattice atoms. Analysis of the measured PIXE angular scan curves, and a comparison with Rutherford back-scattering spectroscopic angular scans, indicated that the As sub-lattice was perhaps slightly more damaged than the Ga sub-lattice.

E.Wendler, F.Schrempel, P.Müller, K.Gärtner, W.Wesch: Nuclear Instruments and Methods in Physics Research B, 1996, 118[1-4], 367-71