The implantation of 2MeV As or Ga ions was used to produce non-stoichiometric buried amorphous layers, and the thermally induced re-growth of the layers was investigated by means of transmission electron microscopy. It was found that low-temperature annealing resulted in the nucleation of high densities of stacking faults. This was associated with a local non-stoichiometry of the amorphous layers. During the annealing of As- or Ga-implanted samples at high temperatures, 2 layers of voids formed as a result of vacancy clustering. These voids were found in areas that were adjacent to the initial location of the amorphous/crystalline interfaces.

J.Jasinski, Z.Liliental-Weber: Acta Physica Polonica A, 1996, 90[4], 825-8