High-resolution transmission electron microscopy was used to investigate lattice damage in Zn+-implanted, and in implanted and annealed (low-power pulsed-laser), material. A study of the damage distribution of implanted samples revealed the presence of a continuous amorphous layer beneath the surface, and the existence of stacking fault tetrahedra nuclei at the inner amorphous/crystalline interface. Solid-phase epitaxial re-growth of ion-implanted material was induced by the low-power pulsed-laser annealing treatment. In the case of annealed samples, the recovery of crystallinity was characterized by the presence of a low density of residual extended defects in the fully recrystallized amorphous layer.

G.Vitali, G.Zollo, C.Pizzuto, D.Manno, M.Kalitzova, M.Rossi: Applied Physics Letters, 1996, 69[26], 4072-4