Extended defects in heavily doped Te-doped (1019/cm3) samples were studied after annealing (700C or 1150C), using high-resolution transmission electron microscopy and energy-dispersive X-ray analysis. It was suggested that the assumption that these defects were enriched in impurity atoms was not itself sufficient to explain changes in the electrical properties during annealing. The estimated numbers of atoms which were involved in faulted dislocation loops seemed to be too low.

J.Borysiuk, J.A.Kozubowski, T.Slupinski: Acta Physica Polonica A, 1996, 90[4], 739-42