A new impurity-free interdiffusion technique was described which involved pulsed anodization followed by rapid thermal annealing at temperatures near to 900C. Enhanced interdiffusion was observed, in the presence of an anodized GaAs capping layer, in GaAs/AlGaAs quantum-well structures. The use of transmission electron microscopy revealed evidence of interdiffusion. The photoluminescence spectra from interdiffused samples exhibited a large blue-shift, with no appreciable line-width broadening.

S.Yuan, Y.Kim, C.Jagadish, P.T.Burke, M.Gal, J.Zou, D.Q.Cai, D.J.H.Cockayne, R.M.Cohen: Applied Physics Letters, 1997, 70[10], 1269-71