A new method was proposed for the preparation of 1-dimensional semiconductor nano-structures. This involved the use of dislocations, generated by plastic deformation, as atomic scale saws with which to cut a 2-dimensional structure into a multiple quantum wire structure. The 2-dimensional structure which was used was a 5nm quantum-well that had been grown onto a (001) GaAs substrate by means of molecular beam epitaxy. The photoluminescence spectrum of the plastically deformed quantum-well exhibited an 0.008eV blue-shift of the exciton peak, as compared with the photoluminescence spectrum before deformation. A statistical analysis of transmission electron microscopic cross-sections revealed a communicating multiple quantum-wire structure (lateral superlattice) that comprised coupled GaAs/GaAlAs quantum wires which were some 18nm in width.

L.Ressier, J.P.Peyrade, J.Barrau, F.Voillot: Superlattices and Microstructures, 1997, 22[1], 35-42