By means of electron spin resonance measurements, a g-value of between 2.019 and 2.023, and a peak-to-peak line-width of between 35 and 50G, were found for amorphous material; H-doped or not. A smaller g-value of 2.014 was detected in the case of H-rich amorphous material. This small g-value was thought to arise from the existence of a different local structure around Ge dangling bonds.

H.Min, S.Ueda, M.Kumeda, T.Shimizu: Japanese Journal of Applied Physics, 1997, 36[2-2A], L82-4