A driving force was proposed, for <100> dark-line defect climb growth, that was based upon the degree of vacancy saturation. In the present strained structures, it was found that compressive strains could reduce the osmotic (climb) force and could suppress the climb of dark-line defects in the <100> direction. The percentage of In, which was required in order to suppress <100> dark-line defect propagation, was calculated for various growth temperatures and doping levels. It was found that, for an n-type doping level above 5 x 1016/cm3, an In content of less than about 9% was sufficient to stop <100> dark-line defect growth. This figure agreed well with experimental data.

H.Wang, A.A.Hopgood, G.I.Ng: Journal of Applied Physics, 1997, 81[7], 3117-23