An investigation was made of deep levels in ion-implanted and rapid thermally annealed p+-n junctions. The samples were implanted with Mg alone, or were co-implanted with Mg and P. The levels were characterized by using deep-level transient spectroscopic and capacitance-voltage transient techniques. Seven majority deep levels that were located in the upper half of the band-gap were detected by means of deep-level transient spectroscopy. Four of these (0.6, 0.45, 0.425, 0.2eV below the conduction band) resulted from rapid thermal annealing, while the other 3 levels (0.46, 0.25, 0.27eV below the conduction band) were attributed to implantation damage. Rapid thermal annealing was also suggested to be responsible for a minority deep level at 1.33eV above the valence band. The various centers were identified with vacancies, complexes or dislocation loops.

L.Quintanilla, S.Dueñas, E.Castán, R.Pinacho, J.Barbolla, J.M.Martín, G.González-Díaz: Journal of Applied Physics, 1997, 81[7], 3143-50