The interaction of H with defects such as dislocations was reviewed for the case of lattice-mismatched relaxed material. It was shown that H strongly passivated extended defect states in both n-type and p-type material and exhibited a high thermal stability as compared with point defect passivation. The fundamental trapping behavior of extended defects was also altered by passivation and underwent a shift towards a so-called point defect-like behavior. The thermal dissociation kinetics of H complexes with extended defect states were revealed by using a combination of deep-level transient spectroscopy and reverse-bias annealing. The existence of a strong passivation effect was confirmed by large values of the H/extended-defect dissociation energies. The interaction of extended defects, dopants and H within relaxed layers resulted in H-dopant complexes and could also give rise to additional H interactions with point defects that were gettered by dislocations.

S.A.Ringel: Solid-State Electronics, 1997, 41[3], 359-80