A systematic experimental investigation was made of D-line luminescence, at photon energies of 0.81 and 0.87eV, in heat-treated C-poor Czochralski-type crystalline wafers that had been deliberately contaminated with Cu. The results revealed the presence of planar-type defects that were bounded by {111} planes and were composed of 60-type dislocations and stacking faults. These led to the generation of D1 and D2 lines in heat-treated C-poor Czochralski-type crystals. It was noted that Cu diffusion into heat-treated samples markedly reduced the D2 line intensity, but enhanced the D1 line luminescence, up to a certain degree of Cu contamination.

K.H.Cho, J.Y.Lee, E.K.Suh, K.W.Kim: Japanese Journal of Applied Physics, 1997, 36[1-1A], 1-5