Ion beam-induced epitaxial crystallization of the outer part of a buried amorphous layer was investigated after generating defects in the near-surface crystalline region by using 2.5keV Ar+ bombardment. It was shown that mobile defects which were produced more than 10nm from the amorphous/crystalline interface stimulated crystallization.

A.I.Titov, V.S.Belyakov, P.Cardwell, G.Farrell: Radiation Effects and Defects in Solids, 1996, 139[3], 189-95