Defect accumulation was studied in (111) samples which were bombarded with atomic and molecular 30keV N ions. Defects were initially created in the samples by using Ar ions. It was found that each N2+ ion created more defects than did two N+ ions. A necessary condition for this molecular effect was the presence of prior radiation damage.

I.A.Abroyan, L.M.Nikulina: Fizika i Tekhnika Poluprovodnikov, 1996, 30[10], 1893-7 (Semiconductors, 1996, 30[10], 990-1)