Monocrystalline (00▪1) layers were implanted with Be, and photoluminescence measurements were then used to monitor the influence of dose and annealing temperature. A new line in the photoluminescence spectrum, at 3.35eV, provided strong evidence for the presence of optically active Be acceptors, and was attributed to band-acceptor recombination. The ionization energy of 0.150eV confirmed that isolated Be had the shallowest acceptor level. Co-implantation of N did not enhance activation of the Be acceptors.

Optical Activation of Be Implanted into GaN. C.Ronning, E.P.Carlson, D.B.Thomson, R.F.Davis: Applied Physics Letters, 1998, 73[12], 1622-4