A new method was proposed for the examination of the damage profiles which were introduced by As implantation. This method exploited the fact that H could be used to decorate the damage because the broken-bond defects which were formed during implantation preferentially adsorbed H. The defect depth profiles were investigated by using secondary ion mass spectroscopy to measure the H intensity. Two predominant peaks were detected by means of thermal desorption spectroscopy, and their intensities reflected the concentrations of complexes of di-vacancies and self-interstitials, and of simple broken bonds. The damage had an almost constant concentration up to the amorphous/crystalline boundary, but the observed profile differed from the theoretically predicted one. The cumulative concentrations of the 2 types of defect were determined by applying 2 independent experimental techniques to as-implanted substrates which had been implanted to a 30keV As dose of 2 x 1015/cm2. The concentration of di-vacancy and self-interstitial complexes was 1.6 x 1013/cm2, and the concentration of simple broken bonds was 1.7 x 1014/cm2.

K.Saito, Y.Sato, N.Yabumoto, Y.Homma: Journal of the Electrochemical Society, 1996, 143[12], 4101-6