Radiation swelling was here explained in terms of a diffusion-like process in which the flux of interstitials out of the plane was defined by the gradient of the interstitial concentration and by the gradient of mechanical stress in the ion-implanted region of the solid. This model was used to describe the dependence of strain upon ion flux density, ion energy, and substrate temperature in ion-implanted (40 to 160keV Ni+, 5 to 180A/cm2) material. It was demonstrated that a suppression of radiation swelling at high substrate temperatures, or high ion-beam current densities, could be explained in terms of the annihilation of radiation defects.

S.Tamulevicius, I.Pozela, M.Andrulevicius: Materials Science and Engineering B, 1996, 40[2-3], 141-6