Weakly damaged <100>, <110> and <111> layers were produced by the multiple implantation of 50 to 300keV B+ ions to various fluences at room temperature. They were then investigated by means of temperature-dependent Rutherford back-scattering spectroscopic channelling measurements. By using a computer programme, the relative concentrations of displaced atoms and their mean displacement distance perpendicular to the low-index atomic rows were determined. The results were different for the above 3 low-index directions. The lattice distortion that was due to a di-vacancy or a <110> split interstitial was calculated by means of molecular dynamics simulations. The spectrum of displacement distances was used to obtain information concerning the types of point defects in weakly damaged material.

B.Weber, E.Wendler, K.Gärtner, D.M.Stock, W.Wesch: Nuclear Instruments and Methods in Physics Research B, 1996, 118[1-4], 113-8