Damage profiles in P+-, BF2+-, As+- and B+-implanted specimens were investigated by means of spectroscopic ellipsometry. The effective dielectric properties of the damaged layers were calculated by using the Bruggeman effective medium approximation, and it was assumed that the damaged layer could be represented optically as being a mixture of crystalline and amorphous materials. The model parameters with regard to the damaged layer thickness and the degree of amorphization were found to depend upon the implanted ion species, energy, and dose. The implantation-induced damage profiles were computer-simulated and were compared with spectroscopic ellipsometry data. When it was annealed at lower temperatures, the implanted amorphous material became relaxed amorphous material and started to recrystallize from the crystalline side of the interface, via solid-phase epitaxial growth. At annealing temperatures above 600C, relaxed amorphous layers became crystalline.

S.Lee, S.Y.Kim, S.G.Oh: Japanese Journal of Applied Physics, 1996, 35[1-12A], 5929-36