It was shown, by means of numerical simulations, that the experimentally observed complex distribution of implanted impurities was due to the appearance of competing trapping centers (sinks) for mobile atoms. These centers lay near to the maxima of the range and elastic-loss distributions. Other sinks were already present. The relative roles of the sinks were found to vary during implantation, thus leading to changes in the impurity distribution. Experimental data on the high-temperature implantation of N+ ions were found to be in good agreement with changes in numerically simulated distributions that were based upon existing information concerning the behavior of N and defects in Si.

G.V.Gadiyak, G.A.Kachurin, I.E.Tyschenko: Fizika i Tekhnika Poluprovodnikov, 1996, 30[11], 1960-8 (Semiconductors, 1996, 30[11], 1019-23)