The effects of deposition parameters upon the configuration and stability of H or D in sputtered amorphous hydrogenated material were analyzed by using Fourier-transform infra-red absorption spectroscopy, D-effusion experiments, and X-ray diffractometry. The fraction of Si-H monohydride bonds was deduced from the infra-red absorption stretching-mode spectrum. It was found that this fraction increased when the substrate temperature was increased. The effusion results revealed the presence of clustered weak D bonds in micro-voids (400C D-effusion peak) as well as isolated Si-D bonds which were embedded in more compact material (650C D-effusion peak). Deconvolution of the stretching-mode infra-red absorption spectra of as-grown or isothermally annealed (510C) samples, led to the conclusion that it was impossible to relate the low-temperature and high-temperature effusion peaks to the decomposition of Si-H2 and Si-H centers, respectively. Effusion of the less-stable H improved the amorphous structural relaxation. It was noted that the ratio of monohydride bonds could be increased by introducing a magnetron cathode into the deposition chamber. At the same time, the D effusion spectrum changed so as to indicate continuous D effusion from 350C; instead of 2 well-defined effusion peaks.

L.Lusson, A.Lusson, P.Elkaim, J.Dixmier, D.Ballutaud: Journal of Applied Physics, 1997, 81[7], 3073-80