The implantation of 2H+ into n-type or p-type samples created high-resistivity material in which the resistance involved activation energies of 0.8 and 0.9eV, respectively. Annealing at 500C restored the initial pre-implanted resistance of the n-type material, due to removal of the deep-trap states which were created by ion-stopping. On the other hand, in p-type samples, annealing at 500C produced motion of the implanted D and the formation of Mg-H complexes which kept the resistance high. About 20% of the D remained in n-type material, even after annealing at 1200C, where it decorated the residual implantation damage. In p-type samples, all of the D had evolved from the crystal by 1000C.

Thermal Stability of 2H-Implanted n- and p-Type GaN. S.J.Pearton, R.G.Wilson, J.M.Zavada, J.Han, R.J.Shul: Applied Physics Letters, 1998, 73[13], 1877-9