Multi-layers of amorphous hydrogenated Si on amorphous hydrogenated Si0.6N0.4 were studied by using photoluminescence and optically detected magnetic resonance methods. The results were explained in terms of 3 types of interface defect. These were Si dangling bonds, T30, separated T3+-N2- pair defects (E centers) and close T3+-N2- pair defects (E* centers). Here, T3+ and N2- were a positively charged threefold-coordinated Si atom and a negatively charged twofold-coordinated N atom, respectively. Light-induced effects upon the photoluminescence and optically detected magnetic resonance were also explained in terms of the creation of interface defects by prolonged illumination.

M.Yamaguchi, K.Morigaki: Physical Review B, 1997, 55[4], 2378-83