A numerical analysis was made of the deep-level transient spectroscopy of heterojunctions. This was done by rigorously solving the Poisson equation and by taking account of the interfacial band discontinuity. By combining a numerical analysis with experimental measurements, the properties of the interfacial defects could be revealed. It was found that there were donor-like interfacial defects at the ZnSe/GaAs interface; with an energy level that was located at about 0.5eV below the conduction band minimum of GaAs, and with an electron capture cross-section of 2.5 x 10-16cm2. The areal density of the interfacial defects was deduced to be 1012/cm2 in the case of ZnSe that had been grown onto GaAs substrates that had been treated with S2Cl2.

F.Lu, S.K.Zhang, J.Wang, Z.S.Li, L.Ke, J.B.Wang, H.H.Sun, X.Wang: Journal of Physics - Condensed Matter, 1997, 9[5], 995-1004