The production of color centers in Tl- and In-doped crystals was studied. It was found that the photo-stimulated dopant-ion luminescence reflected F-center production at the ns time-scale. It was concluded that radiation defects in a doped crystal were spatially distributed in the near-vicinity of the dopants. Photo-stimulated and thermo-stimulated defect recombination also took place, near to dopants, to a limited extent.

G.Vale: Physica Status Solidi B, 1996, 197[2], 293-7