A theory of charged dislocation-line scattering was developed within the framework of the Boltzmann transport equation. Fitting the theory, to temperature-dependent Hall-effect data for the present material, furnished dislocation densities which were in excellent agreement with those measured by using transmission electron microscopy. This showed that the threading edge dislocations were electrically active; in agreement with theoretical predictions.

Dislocation Scattering in GaN. D.C.Look, J.R.Sizelove: Physical Review Letters, 1999, 82[6], 1237-40