A review was presented of the behavior of H in this material. The first part described the methods of defect production and control, the techniques used for their detection and characterization, and interactions with other lattice defects. The second part considered the central role that was played by OH- defects in device fabrication via the proton-exchange method. The third part considered the so-called fixing process, in which OH- ions were supposed to be the main defects which were responsible.

J.M.Cabrera, J.Olivares, M.Carrascosa, J.Rams, R.Muller, E.Dieguez: Advances in Physics, 1996, 45[5], 349-92