It was recalled that H was one of the most common impurities in natural and synthetic crystals, but its incorporation was still poorly understood. A study was made here of the trapping of H which was introduced into a type-Ia natural diamond by means of ion implantation. The H depth distribution was measured by means of nuclear resonance reaction analysis after various annealing stages. Deep trapping of the implanted H within its own range distribution was observed, contrary to the case of Si.

C.G.Smallman, S.H.Connell, C.C.P.Madiba, J.P.F.Sellschop: Nuclear Instruments and Methods in Physics Research B, 1996, 118[1-4], 688-92