A study was made of the distribution of growth dislocations, on various crystal faces, by means of selective etching. It was found that the dislocation density on a face was highest at the center, and depended upon the supersaturation which existed during growth. The dislocation densities were different on the various faces. The results were explained in terms of the generation of dislocations at seed/crystal or crystal/medium interfaces.

K.Sangwal, S.Veintemillas-Verdaguer, J.Torrent-Burgués: Journal of Materials Science, 1996, 31[23], 6299-304