The electromigration threshold (product of current density and threshold length) was measured for non-encapsulated thin-film conductors by using edge-displacement techniques. The product was measured at temperatures of between 175 and 275C, and was found to be temperature-dependent above 200C; where it decreased with increasing temperature. It was suggested that the temperature dependence of the electromigration threshold could be estimated by considering the effects of changes in deformation mechanism as a function of changes in temperature.

R.Frankovic, G.H.Bernstein: Journal of Applied Physics, 1997, 81[3], 1604-6